000 | 03485nla2a2200493 4500 | ||
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001 | 658776 | ||
005 | 20231030041606.0 | ||
035 | _a(RuTPU)RU\TPU\network\26829 | ||
035 | _aRU\TPU\network\26828 | ||
090 | _a658776 | ||
100 | _a20181120d2018 k y0engy50 ba | ||
101 | 0 | _aeng | |
102 | _aGB | ||
105 | _ay z 100zy | ||
135 | _avrgn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aLEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gammaquanta irradiation _fA. V. Gradoboev, K. N. Orlova, A. V. Simonova |
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203 |
_aText _celectronic |
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300 | _aTitle screen | ||
320 | _a[References: 23 tit.] | ||
330 | _aThe paper presents the research results of watt and volt characteristics of LEDs based upon AlGaInP heterostructures with multiple quantum wells in the active region. The research is completed for LEDs (emission wavelengths 624 nm and 590 nm) under irradiation by fast neutron and gamma-quanta in passive powering mode. Watt-voltage characteristics in the average and high electron injection areas are described as a power function of the operating voltage. It has been revealed that the LEDs transition from average electron injection area to high electron injection area occurs by overcoming the transition area. It disappears as it get closer to the limit result of the irradiation LEDs that is low electron injection mode in the entire supply voltage range. It has been established that the gamma radiation facilitates initial defects restructuring only 42% compared to 100% when irradiation is performed by fast neutrons. Ratio between measured on the boundary between low and average electron injection areas current value and the contribution magnitude of the first stage LEDs emissive power reducing is established. It is allows to predict LEDs resistance to irradiation by fast neutrons and gamma rays. | ||
461 | 1 |
_0(RuTPU)RU\TPU\network\2008 _tIOP Conference Series: Materials Science and Engineering |
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463 | 1 |
_0(RuTPU)RU\TPU\network\26822 _tVol. 363 : Cognitive Robotics _oII International Conference, 22–25 November 2017, Tomsk, Russian Federation _o[proceedings] _v[012010, 6 p.] _d2018 |
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610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aтруды учёных ТПУ | |
610 | 1 | _aсветодиоды | |
610 | 1 | _aгетероструктуры | |
610 | 1 | _aквантовые ямы | |
610 | 1 | _aбыстрые нейтроны | |
610 | 1 | _aоблучение | |
610 | 1 | _aгамма-кванты | |
610 | 1 | _aинжекция | |
610 | 1 | _aэлектроны | |
610 | 1 | _aдефекты | |
700 | 1 |
_aGradoboev _bA. V. _cphysicist _cProfessor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences _f1952- _gAleksandr Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\34242 |
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701 | 1 |
_aOrlova _bK. N. |
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701 | 1 |
_aSimonova _bA. V. |
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712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа неразрушающего контроля и безопасности _bОтделение контроля и диагностики _h7978 _2stltpush _3(RuTPU)RU\TPU\col\23584 |
801 | 1 |
_aRU _b63413507 _c20150101 _gRCR |
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801 | 2 |
_aRU _b63413507 _c20181129 _gRCR |
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856 | 4 | _uhttps://doi.org/10.1088/1757-899X/363/1/012010 | |
856 | 4 | _uhttp://earchive.tpu.ru/handle/11683/51792 | |
942 | _cCF |