| 000 | 04107nlm1a2200385 4500 | ||
|---|---|---|---|
| 001 | 659309 | ||
| 005 | 20231030041624.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\27813 | ||
| 090 | _a659309 | ||
| 100 | _a20190204a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aHigh intensity, macroparticle-free, aluminum ion beam formation _fA. I. Ryabchikov [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 37 tit.] | ||
| 330 | _aWe describe a vacuum arc based system for the generation of repetitively pulsed metal ion beams with very high current density, and the results of experimental investigations of the performance of this new system, as well as the results of numerical simulations. Our approach uses a DC vacuum arc as a metal plasma source, and the beam-forming technique is a hybrid method using features of conventional gridded ion extraction together with some plasma immersion attributes. A hemispherical grid is located some distance from the plasma source so as to intercept part of the metal plasma flow and repetitively pulse-biased to the requisite ion beam energy. Ions are accelerated in the high voltage sheath that forms in front of the biased grid and focused into a converging beam that can be of a very high current density. Space charge neutralization is provided by cold plasma that streams through the grid during the bias-off part of the cycle. At the same time, macroparticles in the vacuum arc plasma are blocked from viewing the target by a metal disk positioned centrally on the hemispherical grid. In the work outlined here, we formed 5?keV aluminum ion beams with a current density up to 470?mA/cm2 at a negative bias amplitude of 3?kV and a pulse repetition rate of 105 pulse per second. The experiments and numerical simulations demonstrate the formation of high-intensity macroparticle-free aluminum ion beams for material surface modification and other possible applications. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tJournal of Applied Physics | ||
| 463 |
_tVol. 123, iss. 23 _v[233301, 11 p.] _d2018 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aRyabchikov _bA. I. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cphysicist _f1950- _gAleksandr Ilyich _2stltpush _3(RuTPU)RU\TPU\pers\30912 |
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| 701 | 1 |
_aShevelev _bA. E. _cPhysicist _cEngineer of Tomsk Polytechnic University _f1990- _gAleksey Eduardovich _2stltpush _3(RuTPU)RU\TPU\pers\36832 |
|
| 701 | 1 |
_aSivin _bD. O. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of technical sciences _f1978- _gDenis Olegovich _2stltpush _3(RuTPU)RU\TPU\pers\34240 |
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| 701 | 1 |
_aKoval _bT. V. _cmathematician, physicist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1953- _gTamara Vasilievna _2stltpush _3(RuTPU)RU\TPU\pers\34227 |
|
| 701 | 0 |
_aChan My Kim An _cspecialist in the field of informatics and computer technology _cResearch Engineer of Tomsk Polytechnic University _f1988- _2stltpush _3(RuTPU)RU\TPU\pers\42959 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучная лаборатория высокоинтенсивной имплантации ионов _h7868 _2stltpush _3(RuTPU)RU\TPU\col\23698 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа информационных технологий и робототехники _bОтделение информационных технологий _h7951 _2stltpush _3(RuTPU)RU\TPU\col\23515 |
| 801 | 2 |
_aRU _b63413507 _c20190204 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1063/1.5034082 | |
| 942 | _cCF | ||