000 02947nlm0a2200469 4500
001 660005
005 20231030041649.0
035 _a(RuTPU)RU\TPU\network\28884
035 _aRU\TPU\network\28880
090 _a660005
100 _a20190416d2018 k y0engy50 ba
101 0 _aeng
105 _ay z 100zy
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aSimulation of a Metal Vapor Active Media Power Supply
_fI. S. Musorov [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: 9 tit.]
330 _aThe results of the development of the high-frequency metal vapor active media power supply are presented. The results of OrCAD simulation of the processes that occur in the power supply are described. The results of the simulation and experiment for the resistive load operation mode were compared.
333 _aРежим доступа: по договору с организацией-держателем ресурса
463 _tMicro/Nanotechnologies and Electron Devices (EDM)
_o19th International Conference of Young Specialists, 29 June - 3 July 2018, Erlagol (Altai Republic), Russia
_v[P. 598-601]
_d2018
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _abrightness amplifier
610 1 _ahigh pulse repetition frequency
610 1 _aradial profile
610 1 _aamplification
610 1 _aradiation
610 1 _aусилители яркости
610 1 _aусиление
610 1 _aизлучение
701 1 _aMusorov
_bI. S.
_cSpecialist in the field of electronics
_cAssistant of the Department of Tomsk Polytechnic University
_f1991-
_gIlia Sergeevich
_2stltpush
_3(RuTPU)RU\TPU\pers\39791
701 1 _aOgorodnikov
_bD. N.
_cspecialist in the field of electronics
_cAssociate Professor of Tomsk Polytechnic University, Candidate of technical sciences
_f1974-
_gDmitry Nikolaevich
_2stltpush
_3(RuTPU)RU\TPU\pers\33695
701 1 _aTorgaev
_bS. N.
_cspecialist in the field of electronics
_cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences
_f1984-
_gStanislav Nikolaevich
_2stltpush
_3(RuTPU)RU\TPU\pers\31663
701 1 _aEvtushenko
_bG. S.
_cDoctor of Technical Sciences, Professor of Tomsk Polytechnic University (TPU)
_cRussian specialist in electrophysics
_f1947-
_gGennady Sergeevich
_2stltpush
_3(RuTPU)RU\TPU\pers\29009
712 0 2 _aНациональный исследовательский Томский политехнический университет
_bИнженерная школа неразрушающего контроля и безопасности
_bОтделение электронной инженерии
_h7977
_2stltpush
_3(RuTPU)RU\TPU\col\23507
801 1 _aRU
_b63413507
_c20141010
801 2 _aRU
_b63413507
_c20190416
_gRCR
856 4 _uhttps://doi.org/10.1109/EDM.2018.8435009
942 _cCF