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035			_a(RuTPU)RU\TPU\network\31060
035			_aRU\TPU\network\31059
090			_a660922
100			_a20191107a2019 k y0engy50 ba
101	0		_aeng
102			_aCH
105			_ay z 100zy
135			_adrgn ---uucaa
181		0	_ai
182		0	_ab
200	1		_aChanging the Shape of Watt-Ampere Characteristic of LEDs Based upon GaP ([lambda]=590 nm) Irradiated by Gamma-Quanta _fA. V. Gradoboev, K. N. Orlova, A. V. Simonova
203			_aText _celectronic
300			_aTitle screen
330			_aThere are two distinctive regions can be identified (low (LC) and high currents (HC)) of a watt-ampere (W-I) characteristic of initial LEDs based upon GaP with 590 nm wavelength. The established patterns differ in the exponent. At the same time, the LC region corresponds to an increase in the efficiency of conversion of operating current into light radiation, and the HC region is a slow decline with an increase in the operating current. As a result of irradiation with gamma-quanta in the passive power mode, the change in the shape of W-I characteristic is established, which can be characterized by an increase in the threshold current separating the LC and HC regions with an increase in the irradiation dose. The change in the emissive power of the LEDs and the shift of the threshold current occurs in two stages: in the first stage, the emissive power decreases due to radiation-stimulated rearrangement of the initial defect structure. At the same time, with an increase in the radiation dose, a partial recovery of the emissive power is observed against the background of its overall decrease. At the end of the first stage, the dependence of the damage coefficient on the operating current density in measurements of the W-I characteristics is manifested explicitly. The second stage of reducing the emissive power due to the introduction of radiation defects. In this case, the damage coefficient does not depend on the working current density, and the observed differences are due to the fact that by the end of the first stage its contribution to the overall reduction in emissive power is inversely proportional to the working current density. The established patterns can be used at the stage of designing the LEDs to substantiate the choice of the optimal value of the operating current density and to predict the resistance to irradiation with gamma rays.
333			_aРежим доступа: по договору с организацией-держателем ресурса
461		0	_0(RuTPU)RU\TPU\network\24092 _tMaterials Science Forum _oScientific Journal
463		0	_0(RuTPU)RU\TPU\network\30892 _tVol. 970 : Modern Problems in Materials Processing, Manufacturing, Testing and Quality Assurance II _oSeptember 2019, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU) ; ed. A. P. Surzhikov _v[P. 88-99] _d2019
610	1		_aэлектронный ресурс
610	1		_aтруды учёных ТПУ
610	1		_aEmissive Power
610	1		_aGamma-Quanta
610	1		_aGaP
610	1		_aLight-Emitting Diodes
610	1		_aсветодиоды
610	1		_aгамма-кванты
610	1		_aдозы облучения
610	1		_aрадиационные дефекты
700		1	_aGradoboev _bA. V. _cphysicist _cProfessor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences _f1952- _gAleksandr Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\34242
701		1	_aOrlova _bK. N. _cphysicist _cAssociate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of technical sciences _f1985- _gKseniya Nikolaevna _2stltpush _3(RuTPU)RU\TPU\pers\33587
701		1	_aSimonova _bA. V. _cPhysicist _cAssistant of the Department of Tomsk Polytechnic University _f1990- _gAnastasia Vladimirovna _2stltpush _3(RuTPU)RU\TPU\pers\42263
712	0	2	_aНациональный исследовательский Томский политехнический университет _bИнженерная школа неразрушающего контроля и безопасности _bОтделение контроля и диагностики _h7978 _2stltpush _3(RuTPU)RU\TPU\col\23584
801		2	_aRU _b63413507 _c20191107 _gRCR
856	4		_uhttps://doi.org/10.4028/www.scientific.net/MSF.970.88
942			_cCF