| 000 | 03940nla2a2200445 4500 | ||
|---|---|---|---|
| 001 | 660930 | ||
| 005 | 20231030041728.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\31068 | ||
| 035 | _aRU\TPU\network\31057 | ||
| 090 | _a660930 | ||
| 100 | _a20191107a2019 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aCH | ||
| 105 | _ay z 100zy | ||
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aPhenomenological Model of Radiation Hardness of LEDs Based on AlGaInP Heterostructures with Multiple Quantum Wells _fA. V. Gradoboev, K. N. Orlova, A. V. Simonova |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 330 | _aNeutron degradation of LEDs based upon AlGaInP heterostructures ([lambda]=630 nm and [lambda]=590 nm) with multiple quantum wells are presented in the article. For the initial red LED ([lambda]=630 nm) we can clearly distinguish three characteristic regions. In the small current region a low electron injection mode into the active region of the LEDs is observed. Further, as the operating current goes up, there are average and high electron injection in the active LEDs area regions. However, for the LEDY, the difference in the average and high electron injection regions is more pronounced and low electron injection region is absent. The boundary between the average and high electron injection regions can be characterized by the boundary current, which goes up with increasing exposure level. Three regions of electron injection in the active area of LEDs: low, average and high electron injection are illustrated for both types of LEDs under fast neutron irradiation. Based on the established relationships describing the emission power changing, a phenomenological model of the radiation hardness of LEDs based on AlGaInP heterostructures with MQW was shown. The LEDs radiation hardness is determined by the boundary current value, emission power in the low electron injection into the active LEDs area, the initial defective structure. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\24092 _tMaterials Science Forum _oScientific Journal |
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| 463 | 0 |
_0(RuTPU)RU\TPU\network\30892 _tVol. 970 : Modern Problems in Materials Processing, Manufacturing, Testing and Quality Assurance II _oSeptember 2019, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU) ; ed. A. P. Surzhikov _v[P. 167-176] _d2019 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aAlGaInP | |
| 610 | 1 | _aHeterostructures | |
| 610 | 1 | _aLight Emitting Diodes | |
| 610 | 1 | _aгетероструктуры | |
| 610 | 1 | _aсветодиоды | |
| 610 | 1 | _aрадиационная стойкость | |
| 610 | 1 | _aквантовые ямы | |
| 700 | 1 |
_aGradoboev _bA. V. _cphysicist _cProfessor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences _f1952- _gAleksandr Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\34242 |
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| 701 | 1 |
_aOrlova _bK. N. _cphysicist _cAssociate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of technical sciences _f1985- _gKseniya Nikolaevna _2stltpush _3(RuTPU)RU\TPU\pers\33587 |
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| 701 | 1 |
_aSimonova _bA. V. _cPhysicist _cAssistant of the Department of Tomsk Polytechnic University _f1990- _gAnastasia Vladimirovna _2stltpush _3(RuTPU)RU\TPU\pers\42263 |
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| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа неразрушающего контроля и безопасности _bОтделение контроля и диагностики _h7978 _2stltpush _3(RuTPU)RU\TPU\col\23584 |
| 801 | 2 |
_aRU _b63413507 _c20191107 _gRCR |
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| 856 | 4 | _uhttps://doi.org/10.4028/www.scientific.net/MSF.970.167 | |
| 942 | _cCF | ||