| 000 | 03259nlm1a2200481 4500 | ||
|---|---|---|---|
| 001 | 661191 | ||
| 005 | 20231030041737.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\31447 | ||
| 035 | _aRU\TPU\network\25612 | ||
| 090 | _a661191 | ||
| 100 | _a20191122a2019 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUA | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aIntracenter processes induced by electron beam and 337 nm laser light in CsI:Tl _fV. Yu. Yakovlev [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 24 tit.] | ||
| 330 | _aInvestigated are the spectral-kinetic properties of the activator luminescence excited in CsI:Tl crystal by a pulsed electron beam and by a pulsed nitrogen laser at λ = 337.1 nm, that corresponds to the long-wave decline of the A-absorption band. It is found that the decay kinetics of 2.6 and 2.25 eV luminescence bands excited by an electron beam at 80 K is mono-exponential with the time constants τ = 4 μs and τ = 13 μs, respectively. The decay kinetics of each from the luminescence bands under the laser excitation is bi-exponential due to the presence of one more component with time constant τ = 900 ns. This sub-microsecond component dominates in the bi-exponential kinetics, and the value of its time constant is determined by the time of the electron transfer from the metastable ψ sub-level of the excited 62P3/2 state to the ground 62P1/2 state of Tl0 center. Phonon-assisted processes causing population of the radiative states of Tl+ centers responsible for 3.0, 2.25 and 2.6 eV luminescence bands are discussed in detail. | ||
| 461 | _tFunctional Materials | ||
| 463 |
_tVol. 26, № 3 _v[P. 454-461] _d2019 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _athallium doped cesium iodide | |
| 610 | 1 | _aluminescence | |
| 610 | 1 | _aTl<sup>+</sup>-perturbed exciton | |
| 610 | 1 | _adecay kinetics | |
| 610 | 1 | _acharge transfer | |
| 610 | 1 | _aлегированные соединения | |
| 610 | 1 | _aлюминесценция | |
| 701 | 1 |
_aYakovlev _bV. Yu. _cspecialist in the field of lightning engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1949- _gViktor Yurjevich _2stltpush _3(RuTPU)RU\TPU\pers\35728 |
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| 701 | 1 |
_aTrefilova _bL. N. _gLarisa Nikolaevna |
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| 701 | 1 |
_aAlekseev _bV. A. _gVadim Aleksandrovich |
|
| 701 | 1 |
_aKarnaukhova _bA. A. _cspecialist in the field of lightning engineering _cAssistant, Associate Professor of Tomsk Polytechnic University _f1983- _gAnna Alekseevna _2stltpush _3(RuTPU)RU\TPU\pers\37830 |
|
| 701 | 1 |
_aShpilinskaya _bO. V. _gOlga Viktorovna |
|
| 701 | 1 |
_aLebedinsky _bA. M. _gAleksey Mikhaylovich |
|
| 701 | 1 |
_aTarakhno _bO. _gAleksey Mikhaylovich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bОтделение материаловедения _h7871 _2stltpush _3(RuTPU)RU\TPU\col\23508 |
| 801 | 2 |
_aRU _b63413507 _c20191122 _gRCR |
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| 856 | 4 | _uhttps://doi.org/10.15407/fm26.03.454 | |
| 942 | _cCF | ||