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| 005 | 20231030041738.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\31485 | ||
| 090 | _a661221 | ||
| 100 | _a20191125a2019 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aUltra high fluence implantation of aluminum ions into CP–Ti _fA. I. Ryabchikov [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 43 tit.] | ||
| 330 | _aThis study describes the possibility of ultra-high fluence low ion energy aluminum implantation for surface modification of titanium. The DC vacuum arc source was used to produce dense metal plasma. Plasma immersion aluminum ions extraction and their ballistic focusing in equipotential space of negatively biased hemispherical electrode were used to obtain high-intensity aluminum ion beam with the maximum amplitude of 0.6?A?at the ion current density up to 200?mA/cm2. The original filtration system was used to prevent the deposition of vacuum arc aluminum macroparticles onto the irradiated area of titanium sample. Aluminum low energy ions (mean ion energy 2.6?keV) were implanted into titanium with the fluences reaching 1021?ion/cm2. The effect of substrate temperature, ion current density on the phase composition, microstructure and elemental distribution was studied by X-ray diffraction, scanning electron microscopy, glow-discharge optical emission spectroscopy and transmission electron microscopy. The results show the appearance of Ti3Al intermetallic phase after Al implantation. The depth of aluminum penetration into titanium increases with the substrate temperature and multiply exceeds the projected ranges of ions of given energies and reaches several dozens of μm. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tJournal of Alloys and Compounds | ||
| 463 |
_tVol. 793 _v[P. 604-612] _d2019 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aion implantation | |
| 610 | 1 | _aintermetallic | |
| 610 | 1 | _alow-energy ion beams | |
| 610 | 1 | _atitanium | |
| 610 | 1 | _aaluminum | |
| 610 | 1 | _aионная имплантация | |
| 610 | 1 | _aионные пучки | |
| 610 | 1 | _aтитан | |
| 610 | 1 | _aалюминий | |
| 701 | 1 |
_aRyabchikov _bA. I. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cphysicist _f1950- _gAleksandr Ilyich _2stltpush _3(RuTPU)RU\TPU\pers\30912 |
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| 701 | 1 |
_aShevelev _bA. E. _cPhysicist _cEngineer of Tomsk Polytechnic University _f1990- _gAleksey Eduardovich _2stltpush _3(RuTPU)RU\TPU\pers\36832 |
|
| 701 | 1 |
_aSivin _bD. O. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of technical sciences _f1978- _gDenis Olegovich _2stltpush _3(RuTPU)RU\TPU\pers\34240 |
|
| 701 | 1 |
_aBozhko _bI. A. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1980- _gIrina Aleksandrovna _2stltpush _3(RuTPU)RU\TPU\pers\34206 |
|
| 701 | 1 |
_aKashkarov _bE. B. _cPhysicist _cAssociate Scientist of Tomsk Polytechnic University, Assistant _f1991- _gEgor Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\34949 |
|
| 701 | 1 |
_aBleykher (Bleicher) _bG. A. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences _f1961- _gGalina Alekseevna _2stltpush _3(RuTPU)RU\TPU\pers\31496 |
|
| 701 | 1 |
_aStepanov _bI. B. _cphysicist _cHead of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences _f1968- _gIgor Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\34218 |
|
| 701 | 1 |
_aIvanova _bA. I. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University _f1987- _gAnna Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\36986 |
|
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_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bОтделение материаловедения _h7871 _2stltpush _3(RuTPU)RU\TPU\col\23508 |
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_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bОтделение экспериментальной физики _h7865 _2stltpush _3(RuTPU)RU\TPU\col\23549 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучная лаборатория высокоинтенсивной имплантации ионов _h7868 _2stltpush _3(RuTPU)RU\TPU\col\23698 |
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_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучно-образовательный центр Б. П. Вейнберга _h7866 _2stltpush _3(RuTPU)RU\TPU\col\23561 |
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_aRU _b63413507 _c20191125 _gRCR |
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| 856 | 4 | _uhttps://doi.org/10.1016/j.jallcom.2019.04.179 | |
| 942 | _cCF | ||