000 03028nlm2a2200421 4500
001 661369
005 20231030041744.0
035 _a(RuTPU)RU\TPU\network\31735
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090 _a661369
100 _a20191209d2019 k y0engy50 ba
101 0 _aeng
105 _ay z 100zy
135 _avrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aFormation of Cr-Zr gradient layer by magnetron sputtering and ion mixing
_fE. B. Kashkarov [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: 12 tit.]
330 _aThe gradient Cr-Zr layer was formed onto Zr-1Nb substrate by magnetron sputtering of chromium and zirconium targets and ion mixing (Ar+ with 25 keV). The distribution of Cr and Zr elements in the deposited coatings was measured by using a glow discharge optical emission spectroscopy. The optimal ion fluence onto the substrate was 8×1019 ion/m2. At higher ion dose, the intensive sputtering of the deposited coating was observed.
461 1 _0(RuTPU)RU\TPU\network\4526
_tMATEC Web of Conferences
463 _tVol. 298 : International Conference on Modern Trends in Manufacturing Technologies and Equipment: Mechanical Engineering and Materials Science (ICMTMTE 2019)
_oBook of Abstracts, Sevastopol, Russia, September 9-13, 2019
_v[00088, 6 p.]
_d2019
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _aградиентные потоки
610 1 _aмагнетронное распыление
701 1 _aKashkarov
_bE. B.
_cPhysicist
_cAssociate Scientist of Tomsk Polytechnic University, Assistant
_f1991-
_gEgor Borisovich
_2stltpush
_3(RuTPU)RU\TPU\pers\34949
701 1 _aSidelev
_bD. V.
_cphysicist
_cengineer of Tomsk Polytechnic University
_f1991-
_gDmitry Vladimirovich
_2stltpush
_3(RuTPU)RU\TPU\pers\34524
701 1 _aRombaeva
_bM. R.
_gMayya Ramazanovna
701 1 _aKudiyarov
_bV. N.
_cphysicist
_cEngineer of Tomsk Polytechnic University
_f1990-
_gVictor Nikolaevich
_2stltpush
_3(RuTPU)RU\TPU\pers\30836
701 1 _aLomygin
_bA.
_cphysicist
_cengineer of Tomsk Polytechnic University
_f1997-
_gAnton
_2stltpush
_3(RuTPU)RU\TPU\pers\45578
712 0 2 _aНациональный исследовательский Томский политехнический университет
_bИнженерная школа ядерных технологий
_bОтделение экспериментальной физики
_h7865
_2stltpush
_3(RuTPU)RU\TPU\col\23549
712 0 2 _aНациональный исследовательский Томский политехнический университет
_bИнженерная школа ядерных технологий
_bНаучно-образовательный центр Б. П. Вейнберга
_h7866
_2stltpush
_3(RuTPU)RU\TPU\col\23561
801 1 _aRU
_b63413507
_c20150101
_gRCR
801 2 _aRU
_b63413507
_c20191212
_gRCR
856 4 _uhttps://doi.org/10.1051/matecconf/201929800088
942 _cCF