000 | 04542nla2a2200469 4500 | ||
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001 | 661469 | ||
005 | 20231030041748.0 | ||
035 | _a(RuTPU)RU\TPU\network\32065 | ||
035 | _aRU\TPU\network\32064 | ||
090 | _a661469 | ||
100 | _a20191226a2019 k y0engy50 ba | ||
101 | 0 | _aeng | |
105 | _ay z 100zy | ||
135 | _adrcn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aThe Study of the Structural Phase State and Properties of Impact Resistant Zr-Y-O Coatings Systems on Si Substrates _fI. A. Bozhko [et al.] |
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203 |
_aText _celectronic |
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300 | _aTitle screen | ||
320 | _a[References: 4 tit.] | ||
330 | _aThe results of studies of the microstructure, phase composition, physical and mechanical properties of coatings of the Zr-Y-O system with a thickness of 3 [mu]m on single-crystal Si substrates produced by pulsed magnetron deposition are presented. The results of the laboratory tests of the impact resistance of the silicon samples with protective coatings of the Zr-Y-O system to shock loads, during the interaction of a stream of Fe microparticles moving at a speed of 5 km/s. are given. According to the data of X-ray and TEM, it was establisheded that the composite coatings of the Zr-Y-O system had a submicrocrystalline columnar structure (dav=46-200 nm) and contain the ZrO[2] phase in the monoclinic and tetragonal modifications. The study of the optical properties of the samples has shown that the coefficient of light transmission for these coatings varies from 70 to 80% in the wavelength range of 400-800 nm. It has been found that the application of the protective coatings of the Zr-Y-O system with a thickness of 3 [mu]m on the surface of the silicon samples leads to increasing in their microhardness from 14 to 19 GPa. Under laboratory conditions, shock tests have shown that the application of these protective coatings of the Zr-Y-O system allow suppressing the processes of erosion in the latter. This is due to the prevention of the formation of small craters, whose size does not exceed 30 [mu]m, as well as due to a considerable decrease in the number of the craters with size from 30 to 50 [mu]m. | ||
333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
461 | 0 |
_0(RuTPU)RU\TPU\network\4816 _tAIP Conference Proceedings |
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463 | 0 |
_0(RuTPU)RU\TPU\network\31884 _tVol. 2167 : Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures 2019 (AMHS'19) _oProceedings of the International Conference, 1–5 October 2019, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU) ; Institute of Strength Physics and Materials Science SB RAS (Russia) ; eds. V. E. Panin ; S. G. Psakhie ; V. M. Fomin _v[020038, 4 p.] _d2019 |
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610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aтруды учёных ТПУ | |
610 | 1 | _aструктурно-фазовые состояния | |
610 | 1 | _aпокрытия | |
610 | 1 | _aподложки | |
610 | 1 | _aфизико-механические свойства | |
610 | 1 | _aмонокристаллический кремний | |
610 | 1 | _aмагнетронное осаждение | |
610 | 1 | _aзащитные покрытия | |
610 | 1 | _aоптические свойства | |
701 | 1 |
_aBozhko _bI. A. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1980- _gIrina Aleksandrovna _2stltpush _3(RuTPU)RU\TPU\pers\34206 |
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701 | 1 |
_aKalashnikov _bM. P. _cphysicist _cEngineer of Tomsk Polytechnic University _gMark Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\33561 |
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701 | 1 |
_aFedorishcheva _bM. V. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, candidate of physical and mathematical sciences _f1958- _gMarina Vladimirovna _2stltpush _3(RuTPU)RU\TPU\pers\35812 |
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701 | 1 |
_aSergeev _bV. P. _cspecialist in the field of materials science _cProfessor of Tomsk Polytechnic University, doctor of technical Sciences _f1949- _gViktor Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\32730 |
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712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bОтделение материаловедения _h7871 _2stltpush _3(RuTPU)RU\TPU\col\23508 |
801 | 2 |
_aRU _b63413507 _c20191226 _gRCR |
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856 | 4 | _uhttps://doi.org/10.1063/1.5131905 | |
942 | _cCF |