| 000 | 02776nlm1a2200445 4500 | ||
|---|---|---|---|
| 001 | 662064 | ||
| 005 | 20231030041808.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\33197 | ||
| 090 | _a662064 | ||
| 100 | _a20200513a2019 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThe Influence of High-Energy Krypton Ion Implantation Temperature on Structure and Properties of Ni–Ti Alloy _fV. P. Poltavtseva, S. A. Gyngazov (Ghyngazov), D. A. Satpaev |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 10 tit.] | ||
| 330 | _aThe influence of the temperature of implantation of Ni–Ti shape memory alloy with 84Kr15+ions at the energy E = 147 MeV on its structural-phase state is investigated. At the implantation temperatures 250 and 300°С, within the projective range Rp and out-range area the following processes and phenomena are observed: new formation of the martensitic В19'-phase, formation of nano-sized particles of the R-phase, increase in resistivity due to the formation of radiation-defect structures, strengthening of the alloy in the austenitic structural-phase state, and longer phase-transition temperature intervals. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tRussian Physics Journal | ||
| 463 |
_tVol. 61, iss. 11 _v[P. 2012–2018] _d2019 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _anickel titanium | |
| 610 | 1 | _aion implantation | |
| 610 | 1 | _aphase transition | |
| 610 | 1 | _ahardening | |
| 610 | 1 | _ananoparticles | |
| 610 | 1 | _aионная имплантация | |
| 610 | 1 | _aфазовые переходы | |
| 610 | 1 | _aупрочнение | |
| 610 | 1 | _aнаночастицы | |
| 700 | 1 |
_aPoltavtseva _bV. P. _gValentina Petrovna |
|
| 701 | 1 |
_aGyngazov (Ghyngazov) _bS. A. _cspecialist in the field of electronics _cLeading researcher of Tomsk Polytechnic University, Doctor of technical sciences _f1958- _gSergey Anatolievich _2stltpush _3(RuTPU)RU\TPU\pers\33279 |
|
| 701 | 1 |
_aSatpaev _bD. A. _gDashi Anatoljevich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут неразрушающего контроля (ИНК) _bПроблемная научно-исследовательская лаборатория электроники, диэлектриков и полупроводников (ПНИЛ ЭДиП) _h194 _2stltpush _3(RuTPU)RU\TPU\col\19033 |
| 801 | 2 |
_aRU _b63413507 _c20200515 _gRCR |
|
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/s11182-019-01631-0 |
| 942 | _cCF | ||