| 000 | 03476nlm1a2200493 4500 | ||
|---|---|---|---|
| 001 | 663060 | ||
| 005 | 20231030041841.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\34229 | ||
| 090 | _a663060 | ||
| 100 | _a20210122a2020 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFormation and structural features of nitrogen-doped titanium dioxide thin films grown by reactive magnetron sputtering _fA. A. Pustovalova, E. L. Boytsova, D. Aubakirova [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 61 tit.] | ||
| 330 | _aThe structural features of N-doped titanium dioxide (N-TiO2) thin films deposited via reactive magnetron sputtering system with different nitrogen to oxygen ratio are analyzed. Bias voltage was used as a significant parameter involved in the deposition process. Grown films have two-phase structure consisting of anatase and rutile mixture. The analysis of structure and morphology of the films by SEM, TEM, XRD, FTIR and XPS techniques showed the changing of anatase to rutile ratio and grain size reduction in N-TiO2 thin films with increase of nitrogen content in the working gas at simultaneous bias applying. Nitrogen atoms in oxide form are located at the crystallites boundaries and this 2D quasi-layer of NOx species limits the epitaxial growth of TiO2 crystallites during film formation. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tApplied Surface Science | ||
| 463 |
_tVol. 534 _v[147572, 10 p.] _d2020 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _atitanium dioxide | |
| 610 | 1 | _aN-doped TiO2 | |
| 610 | 1 | _anitrogen oxides | |
| 610 | 1 | _abias voltage | |
| 610 | 1 | _amagnetron sputtering | |
| 610 | 1 | _aоксид титана | |
| 610 | 1 | _aоксид азота | |
| 610 | 1 | _aмагнетронное распыление | |
| 701 | 1 |
_aPustovalova _bA. A. _gAlla Aleksandrovna |
|
| 701 | 1 |
_aBoytsova _bE. L. _cphysicist _cassistant Professor of Tomsk Polytechnic University _f1975- _gElena Lvovna _2stltpush _3(RuTPU)RU\TPU\pers\36962 |
|
| 701 | 1 |
_aAubakirova _bD. _gDanagul |
|
| 701 | 1 |
_aBruns _bM. P. _gMichael |
|
| 701 | 1 |
_aTverdokhlebov _bS. I. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical science _f1961- _gSergei Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\30855 |
|
| 701 | 1 |
_aPichugin _bV. F. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cPhysicist _f1944- _gVladimir Fyodorovich _2stltpush _3(RuTPU)RU\TPU\pers\30933 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bОтделение ядерно-топливного цикла _h7864 _2stltpush _3(RuTPU)RU\TPU\col\23554 |
| 801 | 2 |
_aRU _b63413507 _c20210122 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.apsusc.2020.147572 | |
| 942 | _cCF | ||