000 | 03190nlm1a2200529 4500 | ||
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001 | 663823 | ||
005 | 20231030041909.0 | ||
035 | _a(RuTPU)RU\TPU\network\34993 | ||
035 | _aRU\TPU\network\27205 | ||
090 | _a663823 | ||
100 | _a20210311a2020 k y0engy50 ba | ||
101 | 0 | _aeng | |
102 | _aNL | ||
135 | _adrcn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aThe luminescence performance of Tb3+ doped ABS-BGP glasses excited by different type of energy sources _fYao Guanpeng, D. T. Valiev, Li Shasha [et al.] |
|
203 |
_aText _celectronic |
||
300 | _aTitle screen | ||
320 | _a[References: 43 tit.] | ||
330 | _aTransparent ABS-BGP (Al2O3-B2O3-SiO2-BaCO3-Gd2O3-P2O5) glasses doped with different level of Tb3+ concentrations (from 0 to 12 mol.%) were synthesized by the high-temperature melting method. The luminescent and energy transfer properties were investigated by transmittance, photoluminescence, cathodoluminescence (CL) and X-ray excited luminescence spectra. The optimal concentration of Tb3+ ions in ABS-BGP glasses excited by both ultraviolet light, electron beam, and X-ray excitation was also determined. The decay time of 543 nm main emission band of Tb3+ doped glasses decrease in the range from 1.66 ± 0.005 to 1.18 ± 0.005 ms with increasing of Tb3+ions. The energy transfer mechanism was discussed, and the corresponding critical distances for Tb3+-Tb3+ ion pairs were calculated. The integral scintillation efficiency of the 10 mol% Tb3+-doped ABS-BGP glass sample reach 63.9% of the Bi4Ge3O12 (BGO) standard crystal. | ||
333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
461 | _tJournal of Luminescence | ||
463 |
_tVol. 226 _v[117514, 6 p.] _d2020 |
||
610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aтруды учёных ТПУ | |
610 | 1 | _aGlassTb3+ ions | |
610 | 1 | _aradioluminescence | |
610 | 1 | _acathodoluminescence | |
610 | 1 | _adecay time | |
610 | 1 | _aenergy transfer mechanism | |
610 | 1 | _aрадиолюминесценция | |
610 | 1 | _aкатодолюминесценция | |
701 | 0 | _aYao Guanpeng | |
701 | 1 |
_aValiev _bD. T. _cspecialist in the field of lightning engineering _cEngineer of Tomsk Polytechnic University _f1987- _gDamir Talgatovich _2stltpush _3(RuTPU)RU\TPU\pers\33772 |
|
701 | 0 | _aLi Shasha | |
701 | 1 |
_aStepanov _bS. A. _cspecialist in the field of lightning engineering _cEngineer of Tomsk Polytechnic University _f1986- _gSergey Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\33771 |
|
701 | 0 | _aLi Chun | |
701 | 0 | _aLin Hai | |
701 | 0 | _aLiu Lina | |
701 | 0 | _aZhou Yanyan | |
701 | 0 | _aZeng Fanming | |
701 | 0 | _aSu Zhongmin | |
712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bОтделение материаловедения _h7871 _2stltpush _3(RuTPU)RU\TPU\col\23508 |
801 | 2 |
_aRU _b63413507 _c20210311 _gRCR |
|
856 | 4 | _uhttps://doi.org/10.1016/j.jlumin.2020.117514 | |
942 | _cCF |