| 000 | 03349nlm1a2200505 4500 | ||
|---|---|---|---|
| 001 | 664533 | ||
| 005 | 20231030041933.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\35717 | ||
| 035 | _aRU\TPU\network\27797 | ||
| 090 | _a664533 | ||
| 100 | _a20210419a2018 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aLow energy, high intensity metal ion implantation method for deep dopant containing layer formation _fA. I. Ryabchikov, A. E. Shevelev, D. O. Sivin [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 20 tit.] | ||
| 330 | _aThis study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tSurface and Coatings Technology | ||
| 463 |
_tVol. 355 _v[P. 123-128] _d2018 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _ahigh intensity ion beam | |
| 610 | 1 | _ametal ion implantation | |
| 610 | 1 | _aintermetallic layers | |
| 610 | 1 | _aaluminum | |
| 610 | 1 | _anickel | |
| 610 | 1 | _aионные пучки | |
| 610 | 1 | _aимплантация | |
| 610 | 1 | _aионы металлов | |
| 610 | 1 | _aалюминий | |
| 610 | 1 | _aникель | |
| 610 | 1 | _aслои | |
| 701 | 1 |
_aRyabchikov _bA. I. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cphysicist _f1950- _gAleksandr Ilyich _2stltpush _3(RuTPU)RU\TPU\pers\30912 |
|
| 701 | 1 |
_aShevelev _bA. E. _cPhysicist _cEngineer of Tomsk Polytechnic University _f1990- _gAleksey Eduardovich _2stltpush _3(RuTPU)RU\TPU\pers\36832 |
|
| 701 | 1 |
_aSivin _bD. O. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of technical sciences _f1978- _gDenis Olegovich _2stltpush _3(RuTPU)RU\TPU\pers\34240 |
|
| 701 | 1 |
_aIvanova _bA. I. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University _f1987- _gAnna Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\36986 |
|
| 701 | 1 |
_aMedvedev _bV. N. _gVladislav Nikolaevich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучная лаборатория высокоинтенсивной имплантации ионов _h7868 _2stltpush _3(RuTPU)RU\TPU\col\23698 |
| 801 | 2 |
_aRU _b63413507 _c20210419 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1016/j.surfcoat.2018.02.111 | |
| 942 | _cCF | ||