000			04386nla2a2200481 4500
001			665450
005			20231030042003.0
035			_a(RuTPU)RU\TPU\network\36649
035			_aRU\TPU\network\34426
090			_a665450
100			_a20211004a2020 k y0engy50 ba
101	0		_aeng
105			_aa z 101zy
135			_adrcn ---uucaa
181		0	_ai
182		0	_ab
200	1		_aStudy of the Regularities of Low- and Super-Low-Energy High-intensity Metal Ion Beams Formation _fA. I. Ryabchikov, A. I. Ivanova, D. O. Sivin [et al.]
203			_aText _celectronic
300			_aTitle screen
320			_a[References: 7 tit.]
330			_aLow energy, high intensity ion implantation provides the ability to form ion-doped layers in metals and alloys at depths of tens and hundreds of micrometers [1], [2]. Ultra-high-dose implantation of low-energy ions is accompanied by significant ion sputtering of the irradiated surface. At ion irradiation fluences exceeding 1021 ion/cm 2 , the thickness of the ion-sputtered layer can exceed 100 ?m. When sputtering the sample surface layer, both matrix material and implanted dopant are sputtered, which leads to a decrease in the efficiency of dopants accumulation and a decrease in the ion-doped layer depth. One of the solutions to the problem of significant ion surface sputtering can be based on high-intensity implantation at ultra-low ion energy, when ion sputtering is minimized and provides only dynamic cleaning of the irradiated surface from contamination with oxides and carbides. The paper presents the results of studying the laws governing the formation of high-intensity low and ultra-low energy beams of metal ions using plasma of a pulsed and continuous vacuum arc discharge. The features and regularities of the formation of beams with a single-grid extraction system and ballistic focusing of ions in the drift space are studied at bias potentials amplitudes from 50 to 2000 V. The influence of grid cell sizes from 100 to, preliminary plasma injection into the drift space and the “electron shower” on the transport efficiency and ballistic focusing of high-intensity beams of titanium ions of low and ultra-low energy is studied.
333			_aРежим доступа: по договору с организацией-держателем ресурса
463		0	_0(RuTPU)RU\TPU\network\34152 _tEnergy Fluxes and Radiation Effects (EFRE-2020 online) _oproceedings of 7th International Congress, September 14-26, 2020, Tomsk, Russia _fNational Research Tomsk Polytechnic University (TPU) ; Institute of Electrical and Electronics Engineers (IEEE) ; ed. N. A. Ratakhin _v[P. 648-652] _d2020
610	1		_aэлектронный ресурс
610	1		_aтруды учёных ТПУ
610	1		_aultra-low energy ion
610	1		_ahigh intensity ion beam
610	1		_avacuum arc
610	1		_aplasma
610	1		_aионы
610	1		_aионные пучки
610	1		_aвакуумные дуги
610	1		_aплазма
701		1	_aRyabchikov _bA. I. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cphysicist _f1950- _gAleksandr Ilyich _2stltpush _3(RuTPU)RU\TPU\pers\30912
701		1	_aIvanova _bA. I. _cphysicist _cAssociate Scientist of Tomsk Polytechnic University _f1987- _gAnna Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\36986
701		1	_aSivin _bD. O. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of technical sciences _f1978- _gDenis Olegovich _2stltpush _3(RuTPU)RU\TPU\pers\34240
701		1	_aDektyarev _bS. V. _cphysicist _cdesign engineer of Tomsk Polytechnic University _f1957- _gSergey Valentinovich _2stltpush _3(RuTPU)RU\TPU\pers\35672
701		1	_aKorneva _bO. S. _cphysicist _cengineer of Tomsk Polytechnic University _f1988- _gOlga Sergeevna _2stltpush _3(RuTPU)RU\TPU\pers\37178
701		1	_aBunin _bA. I. _gAleksey Ivanovich
712	0	2	_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучная лаборатория высокоинтенсивной имплантации ионов _h7868 _2stltpush _3(RuTPU)RU\TPU\col\23698
801		2	_aRU _b63413507 _c20211004 _gRCR
856	4		_uhttps://doi.org/10.1109/EFRE47760.2020.9242010
942			_cCF