| 000 | 03073nlm1a2200433 4500 | ||
|---|---|---|---|
| 001 | 665548 | ||
| 005 | 20231030042007.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\36747 | ||
| 035 | _aRU\TPU\network\27880 | ||
| 090 | _a665548 | ||
| 100 | _a20211015a2020 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aTopological transitions in superconductor nanomembranes under a strong transport current _fR. O. Rezaev, E. I. Smirnova, O. G. Schmidt, V. M. Fomin |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 330 | _aThe topological defects, vortices in bulk superconductors (SCs) and phase slips in low-dimensional SCs are known to lead to the occurrence of a finite resistance. We report on a topological transition between the both types of topological defects under a strong transport current in an open SC nanotube with a submicron-scale inhomogeneity of the normal-to-the-surface component of the applied magnetic field. When the magnetic field is orthogonal to the axis of the nanotube, which carries the transport current in the azimuthal direction, the phase-slip regime is characterized by the vortex/antivortex lifetime ? 10?14 s versus the vortex lifetime ? 10?11 s for vortex chains in the half-tubes, and the induced voltage shows a pulse as a function of the magnetic field. The topological transition between the vortex-chain and phase-slip regimes determines the magnetic-field–voltage and current–voltage characteristics of curved SC nanomembranes to pursue high-performance applications in advanced electronics and quantum computing. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tCommunications Physics | ||
| 463 |
_tVol. 3, iss. 1 _v[144, 8 р.] _d2020 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aelectronic properties and materials | |
| 610 | 1 | _asuperconducting properties and materials | |
| 610 | 1 | _aэлектронные свойства | |
| 610 | 1 | _aэлектронные материалы | |
| 610 | 1 | _aсверхпроводящие свойства | |
| 610 | 1 | _aсверхпроводящие материалы | |
| 701 | 1 |
_aRezaev _bR. O. _cphysicist _cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1982- _gRoman Olegovich _2stltpush _3(RuTPU)RU\TPU\pers\31777 |
|
| 701 | 1 |
_aSmirnova _bE. I. _gEkaterina Ivanovna |
|
| 701 | 1 |
_aSchmidt _bO. G. _gOliver |
|
| 701 | 1 |
_aFomin _bV. M. _gVladimir Mikhaylovich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 801 | 2 |
_aRU _b63413507 _c20211015 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1038/s42005-020-00411-4 | |
| 942 | _cCF | ||