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100 _a20211209a2021 k y0engy50 ba
101 0 _aeng
102 _aUS
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aNovel Cyan-Green-Emitting Bi3+-Doped BaScO2F, R+(R=Na, K, Rb) Perovskite Used for Achieving Full-Visible-Spectrum LED Lighting
_fCai Mingsheng, Lang Tianchun, Khan Tao [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: 46 tit.]
330 _aCyan-emitting phosphors are important for near-ultraviolet (NUV) light-emitting diodes (LEDs) to gain high-quality white lighting. In the present work, a Bi3+-doped BaScO2F, R+ (R=Na, K, Rb) perovskite, which emits 506 nm cyan-green light under 360 or 415 nm excitation, is obtained via a high-temperature solid-state method for the first time. The obtained perovskite shows improved photoluminescence and thermal stability due to the charge compensation of Na+, K+, and Rb+ co-doping. Its spectral broadening is attributed to two centers Bi (1) and Bi (2), which are caused by the zone-boundary octahedral tilting due to the substitution of Bi3+ for the larger Ba2+. Employing the blend phosphors of Ba0.998ScO2F:0.001Bi3+,0.001K+ and the commercial BAM:Eu2+, YAG:Ce3+, and CaAlSiN3:Eu2+, a full-spectrum white LED device with Ra = 96 and CCT = 4434 K was fabricated with a 360 nm NUV chip. Interestingly, a novel strategy is proposed: the cyan-green Ba0.998ScO2F:0.001Bi3+,0.001K+ and orange Sr3SiO5:Eu2+ phosphors were packaged with a 415 nm NUV chip to produce the white LED with Ra=85 and CCT = 4811 K.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tInorganic Chemistry
463 _tVol. 60, iss. 20
_v[P. 15519–15528]
_d2021
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _aизлучения
610 1 _aсветодиодное освещение
610 1 _aвидимые спектры
610 1 _aлюминофоры
610 1 _aсветодиоды
610 1 _aбелый свет
610 1 _aвысокотемпературные методы
701 0 _aCai Mingsheng
701 0 _aLang Tianchun
701 0 _aKhan Tao
701 1 _aValiev
_bD. T.
_cspecialist in the field of material science
_cAssociate Professor of Tomsk Polytechnic University, Candidate of Sciences
_f1987-
_gDamir Talgatovich
_2stltpush
_3(RuTPU)RU\TPU\pers\33772
701 0 _aFang Shuangqiang
701 0 _aGuo Chaozhong
701 0 _aHe Shuangshuang
701 0 _aPeng Lingling
701 0 _aCao Shixiu
701 0 _aBitao Liu
701 0 _aDu Ling
701 0 _aZhong Yang
_cspecialist in the field of lightning engineering
_cAssociate Professor of Tomsk Polytechnic University, Ph.D
_f1990-
_2stltpush
_3(RuTPU)RU\TPU\pers\39798
701 1 _aPolisadova
_bE. F.
_cspecialist in the field of lighting engineering
_cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences
_f1972-
_gElena Fyodorovna
_2stltpush
_3(RuTPU)RU\TPU\pers\33900
712 0 2 _aНациональный исследовательский Томский политехнический университет
_bИнженерная школа новых производственных технологий
_bОтделение материаловедения
_h7871
_2stltpush
_3(RuTPU)RU\TPU\col\23508
801 2 _aRU
_b63413507
_c20211209
_gRCR
856 4 _uhttps://doi.org/10.1021/acs.inorgchem.1c02150
942 _cCF