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090 _a666166
100 _a20211209a2021 k y0engy50 ba
101 0 _aeng
102 _aNL
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aThe effect of MoO3 interlayer on electro-physical characteristics of the perovskite solar cells
_fA. K. Zeinidenov, T. Mukametkali, B. S. Iljyasov [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: 38 tit.]
330 _aThis report shows that sequentially deposited CuPc and MoOx films are an effective hole-transport layer (HTL) for perovskite solar cells (PSCs). PSCs with only CuPc hole-transport layer have a low power conversion efficiency (PCE) of 3.51%, which mostly due to a poor fill factor (FF) of 29.4%. The incorporation of the MoOx interlayer between the CuPc layer and the anode (Ag) significantly boosted device FF and PCE up to 63.2% and 8.12%, respectively. The analysis of the impedance spectra of PSCs indicates that the MoOx interlayer reduces HTL resistance and increases the recombination resistance at the perovskite/HTL interface, which increases an effective charge carrier lifetime. Moreover, MoOx electric transport properties depends on the stoichiometry of the crystal structure, which can be varied by tuning vacuum level during the thermal sputtering of MoOx layers. PSCs based on the MoOx layer deposited at low vacuum (10-2 Pa) have reached PCE of 8.12% owing to the optimization of the interlayer energy levels and electric transport properties of MoOx films. In this work, we have developed the double hole-transport layer (HTL) for PSCs, which can prevent perovskite degradation on perovskite/HTL interface and hinder a severe charge recombination.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tSynthetic Metals
463 _tVol. 281
_v[116903, 7 p.]
_d2021
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _aperovskite solar cells
610 1 _aMoOx
610 1 _ahole transport layers
610 1 _acopper phthalocyanine
610 1 _aV-I characteristics
610 1 _aimpedance spectroscopy
610 1 _aсолнечные элементы
610 1 _aслои
610 1 _aфталоцианин меди
610 1 _aспектроскопия
610 1 _aэлектрофизические характеристики
701 1 _aZeinidenov
_bA. K.
_gAsylbek Kalkenovich
701 1 _aMukametkali
_bT.
_gToktarbek
701 1 _aIljyasov
_bB. S.
_gBoris Salmenovich
701 1 _aAimukhanov
_bA. K.
_gAytbek Kalievich
701 1 _aValiev
_bD. T.
_cspecialist in the field of material science
_cAssociate Professor of Tomsk Polytechnic University, Candidate of Sciences
_f1987-
_gDamir Talgatovich
_2stltpush
_3(RuTPU)RU\TPU\pers\33772
712 0 2 _aНациональный исследовательский Томский политехнический университет
_bИнженерная школа новых производственных технологий
_bОтделение материаловедения
_h7871
_2stltpush
_3(RuTPU)RU\TPU\col\23508
801 2 _aRU
_b63413507
_c20211209
_gRCR
856 4 _uhttps://doi.org/10.1016/j.synthmet.2021.116903
942 _cCF