| 000 | 02998nlm1a2200385 4500 | ||
|---|---|---|---|
| 001 | 666974 | ||
| 005 | 20231030042055.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\38178 | ||
| 090 | _a666974 | ||
| 100 | _a20220209a2018 k y0engy50 ba | ||
| 101 | 0 |
_aeng _deng |
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| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aA Combined Model of Charging of the Surface and Bulk of a Dielectric Target by Electrons with the Energies 10–30 keV _fV. M. Zykov, D. A. Neyman |
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| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 13 tit.] | ||
| 330 | _aA physico-mathematical model of the processes of radiation-induced charging of dielectric materials with open surfaces, irradiated with monoenergetic electrons in the energy range 10–30 keV, is described. The model takes into account the relationship between the processes of surface and bulk charging for the given conditions of the experimental design, which accounts for the effect of anomalously long charging of dielectrics after the incident energy of primary electrons during charging is reduced to below the second critical energy for the secondary electronic emission coefficient. The initial fast phase of charging a high-resistivity dielectric material (Al2O3) is investigated. It is shown that as the incident electron energy is approaching the second critical energy during charging, the secondary electronic emission is partially suppressed due to negative charging of the open surface of the dielectric and formation of a near-surface inversion electrical field retarding the electronic emission yield. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tRussian Physics Journal | ||
| 463 |
_tVol. 60, iss. 12 _v[P. 2201-2208] _d2018 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _adielectric | |
| 610 | 1 | _asurface charging | |
| 610 | 1 | _abulk charging | |
| 610 | 1 | _amonoenergetic electrons | |
| 610 | 1 | _asecondary electronic emission | |
| 700 | 1 |
_aZykov _bV. M. _cPhysicist, Specialist in the field of quality _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1940- _gVladimir Mikhailovich _2stltpush _3(RuTPU)RU\TPU\pers\38201 |
|
| 701 | 1 |
_aNeyman _bD. A. _cphysicist _cEngineer of Tomsk Polytechnic University _f1989- _gDmitry Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\38878 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа неразрушающего контроля и безопасности _bИспытательный центр _bЛаборатория испытаний на радиационную электризацию _h7991 _2stltpush _3(RuTPU)RU\TPU\col\23582 |
| 801 | 2 |
_aRU _b63413507 _c20220209 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1007/s11182-018-1347-0 | |
| 942 | _cCF | ||