| 000 | 03391nlm1a2200433 4500 | ||
|---|---|---|---|
| 001 | 667075 | ||
| 005 | 20231030042058.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\38279 | ||
| 090 | _a667075 | ||
| 100 | _a20220221a2021 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFormation, Focusing and Transport of Highintensity, Low-Energy Metal Ion Beams _fA. I. Ryabchikov, A. E. Shevelev, D. O. Sivin [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 47 tit.] | ||
| 330 | _aHigh-intensity implantation of low-energy ions into various materials demonstrates the formation of long, ionalloyed layers having a thickness of tens and hundreds of micrometers. A deep incorporation of alloying elements in materials is achieved, first of all, due to a stronger radiation-induced ion diffusion at ultrahigh current densities and radiation fluence ranging from 1020 to 1022 cm2, when the diffusion coefficient exceeds its classical value derived from Arrhenius theory by several orders of magnitude. Nevertheless, the generation of low-energy ions with energies of several or a few kiloelectronvolts at high current densities of several hundreds of milliamperes per square metre and their effective transport, is a sophisticated problem. The paper studies the ballistic focusing of high-intensity pulsed ion beams at 2 kV accelerating voltage, 800 ?s pulse time, 0.8 duty cycle, and their propagation through the preliminary injected low-density background plasma. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tRussian Physics Journal | ||
| 463 |
_tVol. 63, iss. 10 _v[P. 1700-1712] _d2021 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _avacuum arc plasma | |
| 610 | 1 | _aion beam generation | |
| 610 | 1 | _aion implantation | |
| 610 | 1 | _aплазма | |
| 610 | 1 | _aионные пучки | |
| 610 | 1 | _aионная имплантация | |
| 701 | 1 |
_aRyabchikov _bA. I. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cphysicist _f1950- _gAleksandr Ilyich _2stltpush _3(RuTPU)RU\TPU\pers\30912 |
|
| 701 | 1 |
_aShevelev _bA. E. _cPhysicist _cEngineer of Tomsk Polytechnic University _f1990- _gAleksey Eduardovich _2stltpush _3(RuTPU)RU\TPU\pers\36832 |
|
| 701 | 1 |
_aSivin _bD. O. _cphysicist _cSenior researcher of Tomsk Polytechnic University, Candidate of technical sciences _f1978- _gDenis Olegovich _2stltpush _3(RuTPU)RU\TPU\pers\34240 |
|
| 701 | 1 |
_aDektyarev _bS. V. _cphysicist _cdesign engineer of Tomsk Polytechnic University _f1957- _gSergey Valentinovich _2stltpush _3(RuTPU)RU\TPU\pers\35672 |
|
| 701 | 1 |
_aKorneva _bO. S. _cphysicist _cengineer of Tomsk Polytechnic University _f1988- _gOlga Sergeevna _2stltpush _3(RuTPU)RU\TPU\pers\37178 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучная лаборатория высокоинтенсивной имплантации ионов _h7868 _2stltpush _3(RuTPU)RU\TPU\col\23698 |
| 801 | 2 |
_aRU _b63413507 _c20220221 _gRCR |
|
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/s11182-021-02224-6 |
| 942 | _cCF | ||