| 000 | 03730nlm1a2200481 4500 | ||
|---|---|---|---|
| 001 | 667310 | ||
| 005 | 20231030042106.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\38515 | ||
| 035 | _aRU\TPU\network\37711 | ||
| 090 | _a667310 | ||
| 100 | _a20220315a2021 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrgn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aRadioactivation Monitoring of the Density of Wear-Resistant AlN and CrN Coatings on Silicon _fV. A. Ryzhkov, V. A. Tarbokov, E. A. Smolyansky, G. E. Remnev |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 5 tit.] | ||
| 330 | _aA combination of two methods (nondestructive proton beam radioactivation analysis and optical microinterferometry) has been used for measuring the mass and linear thicknesses of AlN and CrN coatings deposited onto silicon substrates by means of magnetron sputtering. It is established that, at linear thickness from 2.2 to 5.7 μm, the density of deposits is close to that of bulk materials (3.26 g/cm3 for AlN and 5.9 g/cm3 for CrN), while the stoichiometry of nitrides can be controlled by varying the parameters of magnetron sputtering. The proposed method can also be used for determining the densities of metal carbide and oxide films used as wear-resistant coatings. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 338 |
_bРоссийский фонд фундаментальных исследований _d20-21-00025/20 |
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| 461 | _tTechnical Physics Letters | ||
| 463 |
_tVol. 47, iss. 7 _v[P. 524-527] _d2021 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _adensity | |
| 610 | 1 | _aradioactivation analysis | |
| 610 | 1 | _amagnetron | |
| 610 | 1 | _amicrointerferometer | |
| 610 | 1 | _aплотность | |
| 610 | 1 | _aрадиоактивный анализ | |
| 610 | 1 | _aмагнетроны | |
| 610 | 1 | _aизносостойкие покрытия | |
| 701 | 1 |
_aRyzhkov _bV. A. _cspecialist in nuclear physics _cSenior Researcher, Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences _f1958- _gVladislav Andreevich _2stltpush _3(RuTPU)RU\TPU\pers\44020 |
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| 701 | 1 |
_aTarbokov _bV. A. _cspecialist in the field of material science _cLeading engineer of Tomsk Polytechnic University, Candidate of technical sciences _f1969- _gVladislav Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\41878 |
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| 701 | 1 |
_aSmolyansky _bE. A. _cPhysicist _cResearch Engineer of Tomsk Polytechnic University _f1985- _gEgor Aleksandrovich _2stltpush _3(RuTPU)RU\TPU\pers\37673 |
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| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bНаучно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" _h7882 _2stltpush _3(RuTPU)RU\TPU\col\23502 |
| 801 | 2 |
_aRU _b63413507 _c20220315 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.1134/S106378502105028X | |
| 942 | _cCF | ||