| 000 | 03262nlm1a2200553 4500 | ||
|---|---|---|---|
| 001 | 667815 | ||
| 005 | 20231030042127.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\39026 | ||
| 035 | _aRU\TPU\network\34432 | ||
| 090 | _a667815 | ||
| 100 | _a20220425a2022 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aLow Cost Embedded Copper Mesh Based on Cracked Template for Highly Durability Transparent EMI Shielding Films _fA. S. Voronin, Yu. V. Fadeev, M. O. Makeev [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 55 tit.] | ||
| 330 | _aEmbedded copper mesh coatings with low sheet resistance and high transparency were formed using a low-cost Cu seed mesh obtained with a magnetron sputtering on a cracked template, and subsequent operations electroplating and embedding in a photocurable resin layer. The influence of the mesh size on the optoelectric characteristics and the electromagnetic shielding efficiency in a wide frequency range is considered. In optimizing the coating properties, a shielding efficiency of 49.38 dB at a frequency of 1 GHz, with integral optical transparency in the visible range of 84.3%, was obtained. Embedded Cu meshes have been shown to be highly bending stable and have excellent adhesion strength. The combination of properties and economic costs for the formation of coatings indicates their high prospects for practical use in shielding transparent objects, such as windows and computer monitors. | ||
| 461 | _tMaterials | ||
| 463 |
_tVol. 15, iss. 4 _v[1449, 17 p.] _d2022 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _atransparent electromagnetic interference (EMI) shielding films | |
| 610 | 1 | _acracked template | |
| 610 | 1 | _aelectroplating | |
| 610 | 1 | _aphotocurable resin | |
| 610 | 1 | _aembedded mesh | |
| 610 | 1 | _adurability | |
| 610 | 1 | _aпрозрачные пленки | |
| 610 | 1 | _aгальванизм | |
| 701 | 1 |
_aVoronin _bA. S. _gAnton Sergeevich |
|
| 701 | 1 |
_aFadeev _bYu. V. _gYurii |
|
| 701 | 1 |
_aMakeev _bM. O. _gMstislav Olegovich |
|
| 701 | 1 |
_aMikhalev _bP. A. _gPavel Alekseevich |
|
| 701 | 1 |
_aOsipkov _bA. S. _gAlexey Sergeevich |
|
| 701 | 1 |
_aProvatorov _bA. S. _gAlexander Sergeevich |
|
| 701 | 1 |
_aRyzhenko _bD. S. _gDmitriy Sergeevich |
|
| 701 | 1 |
_aYurkov _bG. Yu. _gGleb Yurjevich |
|
| 701 | 1 |
_aSimunin _bM. M. _gMikhail Maksimovich |
|
| 701 | 1 |
_aKarpova _bD. V. _gDarina Valerjevna |
|
| 701 | 1 |
_aLukyanenko _bA. V. _gAnna Vitaljevna |
|
| 701 | 1 |
_aKokh _bD. _gDiete |
|
| 701 | 1 |
_aBainov _bD. D. _cSpecialist in the field of plasma technologies _cResearcher of the Tomsk Polytechnic University, Candidate of technical sciences _f1978- _gDashi Dambaevich _2stltpush _3(RuTPU)RU\TPU\pers\34161 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bНаучно-образовательный центр Б. П. Вейнберга _h7866 _2stltpush _3(RuTPU)RU\TPU\col\23561 |
| 801 | 2 |
_aRU _b63413507 _c20220425 _gRCR |
|
| 856 | 4 | _uhttps://doi.org/10.3390/ma15041449 | |
| 942 | _cCF | ||