| 000 | 03258nlm1a2200433 4500 | ||
|---|---|---|---|
| 001 | 668051 | ||
| 005 | 20231030042136.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\39275 | ||
| 090 | _a668051 | ||
| 100 | _a20220602a2022 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aNL | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aCu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth _fS. P. Zenkin, A. V. Gaydaychuk, A. S. Mitulinsky, S. A. Linnik |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 19 tit.] | ||
| 330 | _aDue to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tMaterials Letters | ||
| 463 |
_tVol. 321 _v[132441, 4 p.] _d2022 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _adiamond heteroepitaxy | |
| 610 | 1 | _aIr-Cu thin film | |
| 610 | 1 | _aCVD diamond | |
| 610 | 1 | _aгетероэпитаксия | |
| 610 | 1 | _aтонкие пленки | |
| 701 | 1 |
_aZenkin _bS. P. _cphysicist _cResearcher of Tomsk Polytechnic University _f1988- _gSergey Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\41880 |
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| 701 | 1 |
_aGaydaychuk _bA. V. _cphysicist _cPostgraduate, Engineer - Researcher of Tomsk Polytechnic University _f1984- _gAlexander Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\32876 |
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| 701 | 1 |
_aMitulinsky _bA. S. _celectric power specialist _ctechnician of Tomsk Polytechnic University _f1998- _gAleksandr Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\47113 |
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| 701 | 1 |
_aLinnik _bS. A. _cphysicist _cEngineer-Researcher of Tomsk Polytechnic University _f1985- _gStepan Andreevich _2stltpush _3(RuTPU)RU\TPU\pers\32877 |
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| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИсследовательская школа физики высокоэнергетических процессов _c(2017- ) _h8118 _2stltpush _3(RuTPU)RU\TPU\col\23551 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bНаучно-производственная лаборатория "Импульсно-пучковых, электроразрядных и плазменных технологий" _h7882 _2stltpush _3(RuTPU)RU\TPU\col\23502 |
| 801 | 2 |
_aRU _b63413507 _c20220602 _gRCR |
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| 856 | 4 | _uhttps://doi.org/10.1016/j.matlet.2022.132441 | |
| 942 | _cCF | ||