| 000 | 03316nlm2a2200361 4500 | ||
|---|---|---|---|
| 001 | 668826 | ||
| 005 | 20231030042201.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\40063 | ||
| 035 | _aRU\TPU\network\20681 | ||
| 090 | _a668826 | ||
| 100 | _a20230126a2022 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 105 | _ay z 100zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aRecovery of LED Emission Power under the Exposure to γ-n-Pulse _fF. F. Zhamaldinov, A. V. Gradoboev, K. N. Orlova, A. V. Simonova |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 17 tit.] | ||
| 330 | _aThe article presents results of the study of the effect of LED power modes based on AlGaAs heterostructures (short-circuit, open circuit, and active mode with the passage of operating current during irradiation) on the resistance to ?-n-pulse exposure. Reduction of LED emission power under the influence of ?-n-pulse occurs in two stages irrespective of irradiation power mode, with each stage characterized by its own regularity and its own factor. Built-in electric field of p-n-junction does not contribute significantly to the degradation of LED power when exposed to ?-n-pulse. At irradiation of LED in active power mode after exposure to ?-n-pulse (Fn ? 1.5·1012n/cm2, D? ? 20 Gy (Si)) a recovery of LED power by the value of ?P is observed. Recovery of ?P power leads to reduction of the damage factor at the first stage, to increase of the LED resistance, and to shift of the boundary between the stages to the area of higher neutron fluences. It is supposed, that the observed jump-like increase of ?P radiation power under the influence of ?-n-pulse is caused by radiation-stimulated annealing of local mechanical stresses that is generated under the condition of passing of operating current through LED. | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\network\3526 _tJournal of Physics: Conference Series |
|
| 463 |
_tVol. 2261 : International Conference on Information and Electronics Engineering (ICIEE 2022) _o11th International Conference, 18-21 February 2022, Online _v[012005, 7 p.] _d2022 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aZhamaldinov _bF. F. _gFail Firgatovich |
|
| 701 | 1 |
_aGradoboev _bA. V. _cphysicist _cProfessor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences _f1952- _gAleksandr Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\34242 |
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| 701 | 1 |
_aOrlova _bK. N. _cphysicist _cAssociate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of technical sciences _f1985- _gKseniya Nikolaevna _2stltpush _3(RuTPU)RU\TPU\pers\33587 |
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| 701 | 1 |
_aSimonova _bA. V. _cPhysicist _cAssistant of the Department of Tomsk Polytechnic University _f1990- _gAnastasia Vladimirovna _2stltpush _3(RuTPU)RU\TPU\pers\42263 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bОтделение экспериментальной физики _h7865 _2stltpush _3(RuTPU)RU\TPU\col\23549 |
| 801 | 2 |
_aRU _b63413507 _c20230126 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1088/1742-6596/2261/1/012005 | |
| 942 | _cCF | ||