| 000 | 03074nlm1a2200409 4500 | ||
|---|---|---|---|
| 001 | 669430 | ||
| 005 | 20231030042222.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\40670 | ||
| 035 | _aRU\TPU\network\40570 | ||
| 090 | _a669430 | ||
| 100 | _a20230505a2023 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aLuminescence Control of Led Heterostructures Grown by Method of Metalorganic Vapor Phase Epitaxy on Sapphire _fLi Zixuan, L. V. Vorobyova, V. I. Oleshko |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 9 tit.] | ||
| 330 | _aThe paper presents the results of spectral and kinetic characteristics of pulse cathode- and photoluminescence of AlGaN/GaN and InGaN/GaN LED heterostructures grown on sapphire by metalorganic vapor phase epitaxy. The effect of high current electron beam energy density on the spectral and amplitude characteristics of luminescence spectra of heterostructures is studied. The spatial distribution of fluorescence characteristics on the wafer surface was studied. It is found that in some InGaN/GaN heterostructures, a shift of the maximum of stimulated cathodoluminescence spectra, measured at different points of the sample, is observed. This result is explained by variations in the composition and thickness of the quantum dimensional active region caused by nonideality of the wafer growth process. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tRussian Physics Journal | ||
| 463 |
_tVol. 65, iss. 11 _v[P. 1875-1880] _d2023 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aLED | |
| 610 | 1 | _aheterostructure | |
| 610 | 1 | _asuperlattice | |
| 610 | 1 | _acathode- and photoluminescence | |
| 700 | 0 | _aLi Zixuan | |
| 701 | 1 |
_aVorobyova _bL. V. _clinguist _cassociate Professor of Tomsk Polytechnic University, candidate of philological Sciences _f1979- _gLyudmila Vladimirovna _2stltpush _3(RuTPU)RU\TPU\pers\36255 |
|
| 701 | 1 |
_aOleshko _bV. I. _cspecialist in the field of lightning engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1948- _gVladimir Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\33783 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bШкола базовой инженерной подготовки _bОтделение русского языка _h8030 _2stltpush _3(RuTPU)RU\TPU\col\23517 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа новых производственных технологий _bОтделение материаловедения _h7871 _2stltpush _3(RuTPU)RU\TPU\col\23508 |
| 801 | 2 |
_aRU _b63413507 _c20230505 _gRCR |
|
| 856 | 4 | 0 | _uhttps://doi.org/10.1007/s11182-023-02845-z |
| 942 | _cCF | ||