| 000 | 03089nlm1a2200373 4500 | ||
|---|---|---|---|
| 001 | 669559 | ||
| 005 | 20231030042227.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\40811 | ||
| 035 | _aRU\TPU\network\39668 | ||
| 090 | _a669559 | ||
| 100 | _a20230627a2022 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aPhysical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n-n+-GaN Schottky contacts _fN. A. Torkhov, A. V. Gradoboev, V. Budnaev [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 63 tit.] | ||
| 330 | _aThe results obtained here suggest that low-dose 60Co γ-irradiation (Dγ∼ 140 Gy) has a complex effect on close AuNi/n-n+-GaN{0001} Schottky contacts. This manifests in the disappearance of current steps in the initial section of the forward current-voltage curve, improvement in the average values of the ideality factor n, a decrease in the average values of the true Schottky barrier height ϕbn in the middle section and an increase in series resistance RS and enhancement of the inhomogeneous metal-semiconductor contact series resistance effect in the final section. In all cases, the observed changes are sustainable. A combination of the Zur-McGill-Smith close Schottky contact defect model, the inhomogeneous contact model and the radiation-induced defect formation model provides an explanation for the physical mechanisms of changes observed in electrophysical and instrumental characteristics after γ-irradiation. Such mechanisms are associated with changes in the electrophysical nature of GaN structural defects (dislocations and interface states) and degradation of the homogeneity of contact conductivity. This paper shows that the low-temperature anomaly also manifests itself in close AuNi/n-n+-GaN Schottky contacts subjected to γ-irradiation. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 | _tSemiconductor Science and Technology | ||
| 463 |
_tVol. 37, iss. 10 _v[105005, 18 p.] _d2022 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aTorkhov _bN. A. _gNikolay Aleksandrovich |
|
| 701 | 1 |
_aGradoboev _bA. V. _cphysicist _cProfessor of Yurga technological Institute of Tomsk Polytechnic University, Doctor of technical sciences _f1952- _gAleksandr Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\34242 |
|
| 701 | 1 |
_aBudnaev _bV. _gVadim |
|
| 701 | 1 |
_aIvonin _bI. V. _gIvan Varfolomeevich |
|
| 701 | 1 |
_aNovikov _bV. A. _gVadim Aleksandrovich |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет _bИнженерная школа ядерных технологий _bОтделение экспериментальной физики _h7865 _2stltpush _3(RuTPU)RU\TPU\col\23549 |
| 801 | 2 |
_aRU _b63413507 _c20230627 _gRCR |
|
| 856 | 4 | 0 | _uhttps://doi.org/10.1088/1361-6641/ac7d71 |
| 942 | _cCF | ||