000 03393nlm1a2200469 4500
001 669607
005 20231030042228.0
035 _a(RuTPU)RU\TPU\network\40859
035 _aRU\TPU\network\39643
090 _a669607
100 _a20230710a2023 k y0engy50 ba
101 0 _aeng
102 _aCH
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aFeatures of Helium-Vacancy Complex Formation at the Zr/Nb Interface
_fL. A. Svyatkin, D. V. Terenteva , R. S. Laptev
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: 46 tit.]
330 _aA first-principles study of the atomic structure and electron density distribution at the Zr/Nb interface under the influence of helium impurities and helium–vacancy complexes was performed using the optimised Vanderbilt pseudopotential method. For the determination of the preferred positions of the helium atom, the vacancy and the helium–vacancy complex at the interface, the formation energy of the Zr-Nb-He system has been calculated. The preferred positions of the helium atoms are in the first two atomic layers of Zr at the interface, where helium–vacancy complexes form. This leads to a noticeable increase in the size of the reduced electron density areas induced by vacancies in the first Zr layers at the interface. The formation of the helium–vacancy complex reduces the size of the reduced electron density areas in the third Zr and Nb layers as well as in the Zr and Nb bulk. Vacancies in the first niobium layer near the interface attract the nearest zirconium atoms and partially replenish the electron density. This may indicate a possible self-healing of this type of defect.
461 _tMaterials
463 _tVol. 16, iss. 10
_v[3742, 11 p.]
_d2023
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
610 1 _ananoscale multilayer
610 1 _acoatings
610 1 _ahelium
610 1 _avacancy
610 1 _azirconium/niobium interface
610 1 _adensity functional theory
610 1 _aнаноразмерные многослойные покрытия
610 1 _aгелий
610 1 _aцирконий-ниобиевый сплав
610 1 _aтеория функционала плотности
700 1 _aSvyatkin
_bL. A.
_cphysicist
_cAssociate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences
_f1988-
_gLeonid Aleksandrovich
_2stltpush
_3(RuTPU)RU\TPU\pers\34216
701 1 _aTerenteva
_bD. V.
_cфизик
_cинженер Томского политехнического университета
_f1999-
_gDaria Vitalevna
_2stltpush
_3(RuTPU)RU\TPU\pers\47301
701 1 _aLaptev
_bR. S.
_cphysicist, specialist in the field of non-destructive testing
_cAssociate Scientist of Tomsk Polytechnic University, Assistant, Candidate of Sciences
_f1987-
_gRoman Sergeevich
_2stltpush
_3(RuTPU)RU\TPU\pers\31884
712 0 2 _aНациональный исследовательский Томский политехнический университет
_bИнженерная школа ядерных технологий
_bОтделение экспериментальной физики
_h7865
_2stltpush
_3(RuTPU)RU\TPU\col\23549
801 2 _aRU
_b63413507
_c20230710
_gRCR
856 4 _uhttps://doi.org/10.3390/ma16103742
942 _cCF