Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam = Люминесценция тонкопленочных светодиодных структур при возбуждении сильноточным электронным пучком / V. I. Oleshko [et al.]
Уровень набора: Russian Physics Journal, Scientific JournalЯзык: английский.Страна: .Резюме или реферат: The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone..Примечания о наличии в документе библиографии/указателя: [References: p. 66 (9 tit.)].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайнTitle screen
[References: p. 66 (9 tit.)]
The possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone.
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