Title screen

[Ref.: p. 1091-1092 (46 tit.)]

Pulsed-spectrometric research shows that the presence of defects, including those that are electrically neutral with respect to the crystal lattice, has a significant influence on the distribution of the radiation-induced electron excitations. This is evident in the electron-excitation sink in the vicinity of defects and the formation of localized excitons around impurities in ionic crystals. This influence of defects on the electron-excitation distribution is probably due to deformation of the lattice in the region of the defect. It is shown that, in the region of the defect, there is oscillating potential relief, the presence of which leads to the capture of charge carriers and their localization in this region. Lattice distortion because of deformation in the region of the defect changes the mutual distribution of the ion pairs. This creates conditions for the effective conversion of electronic excitations to localized near-defect dihalide excitons, which are different from those created in an ideal lattice.