APA

Kaplin V. V., Uglov S. R., .Channeling of 20-35 MeV electrons in Si substrates of multilayer structures. : .

Chicago

Kaplin V V, Uglov S R, .Channeling of 20-35 MeV electrons in Si substrates of multilayer structures. : .

Harvard

Kaplin V. V., Uglov S. R., .Channeling of 20-35 MeV electrons in Si substrates of multilayer structures. : .

MLA

Kaplin V V, Uglov S R, .: . .