APA

Bayazitov R. M., Zakirzyanova L. K., Khaibullin I. B. & Remnev G. E.Formation of heavily doped semiconductor layers by pulsed ion beam treatmen. : .

Chicago

Bayazitov R M, Zakirzyanova L Kh, Khaibullin I B and Remnev G E.Formation of heavily doped semiconductor layers by pulsed ion beam treatmen. : .

Harvard

Bayazitov R. M., Zakirzyanova L. K., Khaibullin I. B. and Remnev G. E.Formation of heavily doped semiconductor layers by pulsed ion beam treatmen. : .

MLA

Bayazitov R M, Zakirzyanova L Kh, Khaibullin I B and Remnev G E.: . .