High-Frequency Short-Pulsed Metal Plasma-Immersion Ion Implantation Using Filtered DC Vacuum-Arc Plasma (Part II) [Electronic resource] / A. I. Ryabchikov, I. A. Ryabchikov, I. B. Stepanov

Основной Автор-лицо: Ryabchikov, A. I., Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, physicist, 1950-, Aleksandr IlyichАльтернативный автор-лицо: Ryabchikov, I. A.;Stepanov, I. B., physicist, Head of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences, 1968-, Igor BorisovichЯзык: английский.Страна: Россия.Серия: Fundamentals of modification processesРезюме или реферат: An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined..Примечания о наличии в документе библиографии/указателя: [References: p. 141 (27 tit.)].Аудитория: .Тематика: физика | плазма | металлы | осаждение | ионная имплантация | металлическая плазма | ионное распыление | импульсы | труды учёных ТПУ | электронный ресурс Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[References: p. 141 (27 tit.)]

An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined.

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