Development of New Ion and Plasma Surface Modification Methods / A. I. Ryabchikov, D. O. Sivin, I. B. Stepanov
Уровень набора: (RuTPU)RU\TPU\network\4598, Advanced Materials Research : Radiation and nuclear techniques in material science, Scientific JournalЯзык: английский.Серия: Plasma, Microwave, Ion, Electron and Isotope TechnologiesРезюме или реферат: The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in Tomsk Polytechnic University (TPU), for DC vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively – pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10–99 %..Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | металлы | плазма | смещения | поверхности Ресурсы он-лайн:Щелкните здесь для доступа в онлайнTitle screen
The review is devoted to the analysis of the present state-of-the-art and development trends of the new methods and equipment being developed in Tomsk Polytechnic University (TPU), for DC vacuum arc-based ion and plasma materials processing. The features and advantages are demonstrated for the method of high-concentration implantation with compensation of surface ion sputtering by metal plasma deposition, the method of metal plasma deposition under repetitively – pulsed ion mixing with ion beams and plasma flow formed in the "Raduga-5" source, and the method of coating deposition and ion implantation, including an application of the filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10–99 %.
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