The Reactive Deposition of TiO[x] Thin Films / D. V. Sidelev, Yu. N. Yuriev
Уровень набора: (RuTPU)RU\TPU\network\4598, Advanced Materials Research, Scientific JournalЯзык: английский.Страна: .Серия: Technologies of Electrophysical Methods of Materials TreatmentРезюме или реферат: The article reports on the aspects of reactive deposition ultra-thin TiOx films (50 nm) by means of dual magnetron system with mirror and closed magnetic field (B field) configurations. The hysteresis effect of electrical discharge characteristics and oxygen partial pressure P(O[2]) are presented. The dual magnetron with closed B field configuration has less hysteresis peculiarities and transits back to metallic deposition mode at higher O[2] flow rate (Q). The deposition rates don’t depend on B field configuration and correlate with changing of P(O[2]) and discharge voltage. The refractive spectra and energy of band gap, which are measured by UV-visible spectrophotometry and ellipsometry (lambda=632.8 nm) methods, have strong dependence on Q(O[2])..Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | магнетронное распыление | реактивное распыление | тонкие пленки Ресурсы он-лайн:Щелкните здесь для доступа в онлайнTitle screen
The article reports on the aspects of reactive deposition ultra-thin TiOx films (50 nm) by means of dual magnetron system with mirror and closed magnetic field (B field) configurations. The hysteresis effect of electrical discharge characteristics and oxygen partial pressure P(O[2]) are presented. The dual magnetron with closed B field configuration has less hysteresis peculiarities and transits back to metallic deposition mode at higher O[2] flow rate (Q). The deposition rates don’t depend on B field configuration and correlate with changing of P(O[2]) and discharge voltage. The refractive spectra and energy of band gap, which are measured by UV-visible spectrophotometry and ellipsometry (lambda=632.8 nm) methods, have strong dependence on Q(O[2]).
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