Carbon saturation of silicon target under the action of pulsed high-intensity ion beam / N. E. Aktaev, G. E. Remnev
Уровень набора: (RuTPU)RU\TPU\network\2008, IOP Conference Series: Materials Science and EngineeringЯзык: английский.Резюме или реферат: The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming..Примечания о наличии в документе библиографии/указателя: [References: 9 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | насыщение | углерод | кремниевые мишени | импульсные пучки | ионные пучки | кремний | поверхности Ресурсы он-лайн:Щелкните здесь для доступа в онлайн | Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 9 tit.]
The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.
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