Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth / Sh. Sambonsuge [et al.]
Уровень набора: Russian Physics JournalЯзык: английский.Страна: .Резюме или реферат: Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen..Примечания о наличии в документе библиографии/указателя: [References: 20 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | карбид кремния | кремний | поверхностная энергия Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 20 tit.]
Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
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