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[References: p. 72 (20 tit.]

The results of studies of the structure-phase state of a chromium-coated silicon substrate system’s subsurface layer treated with low-energy high-current electron beams, 50–200 µs in duration and with an energy density of 15 J/cm2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2–38 µm, chromium-enriched silicon dendrites, chromium disilicide CrSi2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.