Title screen

The most common technological solution for increasing the light efficiency of the LEDs based upon AlGaInP heterostructures are discussed in the paper. The creation of LEDs with the inclusion of quantum wells and quantum dots in the active region, removing the original base and placing the LED on a new substrate, the replacement of the absorbent substrate by the reflective, using light-reflective surfaces such as Bragg reflectors or a mirror base (substrate), the list of new based materials for the LEDs based upon AlGaInP heterostructures as same as sapphire, glass, gallium phosphide, silicon and silicon carbide are presented. Therefore, new advanced methods of emission power are emerging.