Low-temperature peculiarities of density of electronic states and electron transport characteristics in the disordered 2D graphene / N. G. Bobenko, V. E. Egorushkin, N. V. Melnikova [et al.]
Уровень набора: Fullerenes, Nanotubes and Carbon NanostructuresЯзык: английский.Страна: .Резюме или реферат: We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene..Примечания о наличии в документе библиографии/указателя: [References: 38 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | graphene | density of statess | hort-range order | transport properties | structural defects | графены | плотность состояний | транспортные свойства | структурные дефекты | электронные состояния Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
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[References: 38 tit.]
We propose an approach that allows us to take into account the location of atomic defects in the graphene structure and describe the effect of electron scattering on certain configurations of foreign atoms in a graphene matrix on density of electronic states (DOS) and the electron transport characteristics in 2D graphene. The local disorder is shown to play a decisive role in formation of the low-temperature behavior of the DOS and electron transport characteristics in the disordered 2D graphene.
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