Generation of boron ion beams by vacuum arc and planar magnetron ion sources / A. V. Bugaev, V. P. Frolova, V. I. Gushenets [et al.]
Уровень набора: Review of Scientific InstrumentsЯзык: английский.Страна: .Резюме или реферат: Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams..Примечания о наличии в документе библиографии/указателя: [References: 20 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | генерация | ионы бора | вакуумные дуги | планарные технологии Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 20 tit.]
Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams.
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