Cu-Ir thin film alloy as a potential substrate for the heteroepitaxial diamond growth / S. P. Zenkin, A. V. Gaydaychuk, A. S. Mitulinsky, S. A. Linnik
Уровень набора: Materials LettersЯзык: английский.Страна: .Резюме или реферат: Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production..Примечания о наличии в документе библиографии/указателя: [References: 19 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | diamond heteroepitaxy | Ir-Cu thin film | CVD diamond | гетероэпитаксия | тонкие пленки Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
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[References: 19 tit.]
Due to a relatively low mismatch to the diamond lattice, iridium allows to produce high-quality heteroepitaxial diamond films. However, extremely high price of iridium motivates to find a suitable replacement. In this article, we focus on the new homogeneous Ir(Cu) alloy sputtered on the SrTiO3 as a potential substrate material for the diamond heteroepitaxy. We show that in magnetron-sputtered thin films copper can form a solid solution with iridium at concentrations up to 27 at.% with the same FCC structure. Ir(Cu) alloy can reduce using of iridium with the same quality of heteroepitaxial diamond production.
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