APA

Ryabchikov A. I., Shevelev A. E., Sivin D. O., Ivanova A. I. & Medvedev V. N.Low energy, high intensity metal ion implantation method for deep dopant containing layer formation. : .

Chicago

Ryabchikov A I, Shevelev A E, Sivin D O, Ivanova A I and Medvedev V N.Low energy, high intensity metal ion implantation method for deep dopant containing layer formation. : .

Harvard

Ryabchikov A. I., Shevelev A. E., Sivin D. O., Ivanova A. I. and Medvedev V. N.Low energy, high intensity metal ion implantation method for deep dopant containing layer formation. : .

MLA

Ryabchikov A I, Shevelev A E, Sivin D O, Ivanova A I and Medvedev V N.: . .