Low energy, high intensity metal ion implantation method for deep dopant containing layer formation / A. I. Ryabchikov, A. E. Shevelev, D. O. Sivin [et al.]

Уровень набора: Surface and Coatings TechnologyАльтернативный автор-лицо: Ryabchikov, A. I., Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, physicist, 1950-, Aleksandr Ilyich;Shevelev, A. E., Physicist, Engineer of Tomsk Polytechnic University, 1990-, Aleksey Eduardovich;Sivin, D. O., physicist, Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences, 1978-, Denis Olegovich;Ivanova, A. I., physicist, Associate Scientist of Tomsk Polytechnic University, 1987-, Anna Ivanovna;Medvedev, V. N., Vladislav NikolaevichКоллективный автор (вторичный): Национальный исследовательский Томский политехнический университет, Инженерная школа ядерных технологий, Научная лаборатория высокоинтенсивной имплантации ионовЯзык: английский.Резюме или реферат: This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated.Примечания о наличии в документе библиографии/указателя: [References: 20 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | high intensity ion beam | metal ion implantation | intermetallic layers | aluminum | nickel | ионные пучки | имплантация | ионы металлов | алюминий | никель | слои Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[References: 20 tit.]

This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated

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