Low energy, high intensity metal ion implantation method for deep dopant containing layer formation / A. I. Ryabchikov, A. E. Shevelev, D. O. Sivin [et al.]
Уровень набора: Surface and Coatings TechnologyЯзык: английский.Резюме или реферат: This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated.Примечания о наличии в документе библиографии/указателя: [References: 20 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | high intensity ion beam | metal ion implantation | intermetallic layers | aluminum | nickel | ионные пучки | имплантация | ионы металлов | алюминий | никель | слои Ресурсы он-лайн:Щелкните здесь для доступа в онлайнTitle screen
[References: 20 tit.]
This study describes the first results of high intensity macroparticle-free aluminum ion beam formation and its application to low ion energy implantation. A DC vacuum arc was used to produce aluminum plasma flow. A repetitively pulsed macroparticle-free high intensity aluminum ion beam was formed using a plasma immersion ion extraction combined with ion beam focusing. A very high current ion beam with the current up to 0.475 A at bias pulse duration of 4 [mu]s and the pulse repetition rate of 105 pulses per second was obtained. Nickel substrates were irradiated by aluminum ions with very high current densities up to 100 mA/cm2 and accelerating voltages up to 2.1 kV. The maximum fluence of implantation reached 1.2•1021 ion/сm2. The results of the element composition of the modified layer were also investigated
Для данного заглавия нет комментариев.