Title screen

[Ref.: p. 61 (24 tit.)]

The electrical and photoelectrical properties of the polycrystalline silicon after high intensive short pulsed implantation of carbon ions were investigated. A vacuum annealing effect under the pressure of 10 -2 Pa and temperature of 3001200 K on the characteristics of the surface dark conduction and photoconduction was determined. We determined the optimal conditions of thermal treatment during which we achieved changes in the properties more stable to thermal and field excitation. The implantation affects the silicon properties owing to accumulation of the radiation damage and the formation of the inclusions of new nanosized phases. The influence of the induced structural-phases inhomogeneities on the properties is determined by the dose of the incorporated ions and annealing conditions. The type of the conduction changes depending on concentration of the defects. The change in properties after annealing obeys to the regularities which are proper for the ion-heat modification of materials. After annealing in the temperature interval of 300-700 K the alternations in the characteristics are stipulated by dissociation of the donor defect complexes. The nanocrystals sintered at 700-1000 K and their size growth stably affect the characteristics.